Micron Technology DRAM SDRAMMobile-, Part #: MT47H128M16RT-25E AIT:C | Dynamic random access memory | DEX integrated circuits Part #: CM200DU-24NFH | DEX

Part #: CM200DU-24NFH | DEX Features: • Latest thin-wafer processing (n-drift layer) achieves thinner wafer than 6th-generation devices • Performance improved by combining CSTBTTM* and light punch-through (LPT) structures • Inverter system power dissipation minimized by its superior performance(lower VCEsat and Eoff) •Various low-inductance packages and power chips available •Compatible with high-frequency

Tolerance ±4

21 grams (Approximate)

2V pseudo open-drain I/O

DVD-RW DRIVE

Micron Technology DRAM SDRAMMobile-, Part #: MT47H128M16RT-25E AIT:C | Dynamic random access memory | DEX integrated circuits Part #: CM200DU-24NFH | DEXMicron Technology DRAM SDRAM DDR2, Part #: MT47H128M16RT 25E AIT: C features: Industrial and automotive temperature compliant VDD = 1. 8V 0. 1V, VDDQ = 1. 8V 0. 1V JEDEC standard 1. 8V I O (SSTL_18 compatible) Differential data strobe (DQS, DQS#) option 4n bit prefetch architecture Duplicate output strobe (RDQS) option for x8 DLL to align DQ and DQS transitions with CK 8 internal banks for concurrent operation Programmable CAS latency (CL) Posted CAS