IC, FLASH MEMORY, SERIAL NOR, TBGA24, ROHS - S25FL512SAGBHVC10 107W7462P001 – Maximum Dropout: 700 mV

– Maximum Dropout: 700 mV at 150 mA

PROGRAMMABLE

4GB PC3-10600R DDR3-1333 ECC 1RX4 CL9 1

Part #: 2120S

Number of Outputs: 3

IC, FLASH MEMORY, SERIAL NOR, TBGA24, ROHS - S25FL512SAGBHVC10 107W7462P001 – Maximum Dropout: 700 mVIC, FLASH MEMORY, SERIAL NOR, TBGA24, ROHS Description The Cypress S25FL512S device is a flash nonvolatile memory product using: MirrorBit technology that stores two data bits in each memory array transistor Eclipse architecture that dramatically improves program and erase performance 65 nm process lithography This device connects to a host system via an SPI. Traditional SPI single bit serial input and output (Single I O or SIO) is supported as well