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Error Detection (ED) Cycle Indicator to core
ITL:EP4S100G2F40I1G
S3 dual-core processor and W2 Apple wireless chip
NLI:2124035-3
Vishay Transistor
Micron Technology DRAM SDRAM-DDR4, Part #: MT41K256M16TW-093:P | Dynamic random access memory | DEX Gowns/Coats/Shoe Covers/Caps Error Detection (ED) Cycle IndicatorMicron Technology DRAM SDRAM DDR3L, Part #: MT41K256M16TW 093: P features: VDD = VDDQ = 1. 35V (1. 2831. 45V) Backward compatible to VDD = VDDQ = 1. 5V 0. 075V Supports DDR3L devices to be backward compatible in 1. 5V applications Differential bidirectional data strobe 8n bit prefetch architecture Differential clock inputs (CK, CK#) 8 internal banks Nominal and dynamic on die termination (ODT) for data, strobe, and mask signals Programmable CAS (READ)
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