Micron Technology DRAM SDRAM-DDR3, Part #: MT41K128M16JT-125 AUT:K | Dynamic random access memory | DEX EEPROM 5 V • IOFF Supports

5 V • IOFF Supports Partial Power Down Protection • Source/Sink 24 mA at 3

IBM:42D0422

Comfortable Elastic-Stretch Earloops

Microchip Technology 28/40/44-Pin Enhanced Flash Microcontroller

UV wave range: 185+254nm

Micron Technology DRAM SDRAM-DDR3, Part #: MT41K128M16JT-125 AUT:K | Dynamic random access memory | DEX EEPROM 5 V • IOFF SupportsMicron Technology DRAM SDRAM DDR3L, Part #: MT41K128M16JT 125 AUT: K features: VDD = VDDQ = 1. 35V (1. 2831. 45V) Backward compatible to VDD = VDDQ = 1. 5V 0. 075V Differential bidirectional data strobe 8n bit prefetch architecture Differential clock inputs (CK, CK#) 8 internal banks Nominal and dynamic on die termination (ODT) for data, strobe, and mask signals Programmable CAS (READ) latency (CL) Programmable posted CAS additive latency (AL)