Micron Technology DRAM SDRAM-DDR3L, Part #: MT40A1G16KD-062E:E TR | Dynamic random access memory | DEX Polycarbonate Cap Bank Cover GEC:5433971

GEC:5433971

Data is written to the memory array immediately after each byte is successfully transferred to the device

ACS800 Converter

Industrial Grade

50mm Width)

Micron Technology DRAM SDRAM-DDR3L, Part #: MT40A1G16KD-062E:E TR | Dynamic random access memory | DEX Polycarbonate Cap Bank Cover GEC:5433971Micron Technology DRAM SDRAM DDR4, Part #: MT40A1G16KD 062E: E TR features: VDD = VDDQ = 1. 2V + 60mv VPP = 2. 5V, 125mV, + 250mV On die, internal, adjustable VREFDQ generation 1. 2V pseudo open drain I O Refresh time of 8192 cycle at TC temperature range: 16 internal banks (x4, x8): 4 groups of 4 banks each 8n bit prefetch architecture Programmable data strobe preambles Data strobe preamble training Command Address latency (CAL) Multipurpose register